HPMug2oMmNrOfxWQHLiEksa6s0hFu9Ox348d7QefarYlaFR5ArkhOwm3Da1pmxmxCtenj1+6luWD#r#n+EPn9L6Ce+9onqnMlT+i ›› 2010, Vol. 26 ›› Issue (3): 64-68.DOI: 10.3969/j.issn.1009-0479.2010.03.015
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Abstract: ＴｈｅｔｅｃｈｎｏｌｏｇｙｏｆｐｏｌｙｃｒｙｓｔａｌｌｉｎｅｓｉｌｉｃｏｎｉｎＣｈｉｎａｈａｓｂｅｍａｄｅｂｒｅａｋｔｈｒｏｕｇｈｐｒｏｇｒｅｓｓ，ａｎｄｔｈｅｒｅｓｕｌｔｏｆｅｎｅｒｇｙｃｏｎｓｅｒｖａｔｉｏｎｉｓｏｂｖｉｏｕｓ．Ｂｕｔｐｒｏｂｌｅｍｓａｓｌｏｗｂａｒｒｉｅｒｓｔｏｅｎｔｒｙ，ｕｎｒｅａｓｏｎａｂｌｅｉｎｄｕｓｔｒｉａｌｓｔｒｕｃｔｕｒｅａｎｄｗｅａｋｉｎｔｅｒｎａｔｉｏｎａｌｃｏｍｍｕｎｉｃａｔｉｏｎｅｘｉｓｔｉｎｔｈｅｉｎｄｕｓｔｒｙ．Ｒｅｃｏｍｍｅｎｄａｔｉｏｎｓｔｏｓｅｔｃｏｎｄｉｔｉｏｎｓｆｏｒａｃｃｅｓｓ，ｏｐｔｉｍｉｚｅｉｎｄｕｓｔｒｉａｌｄｉｓｔｒｉｂｕｔｉｏｎａｎｄｓｕｐｐｏｒｔｔｈｅｄｅｖｅｌｏｐｍｅｎｔｏｆｅｎｔｅｒｐｒｉｓｅｓｉｎｐｏｌｙｃｒｙｓｔａｌｌｉｎｅｓｉｌｉｃｏｎｉｎｄｕｓｔｒｙｗｅｒｅｍａｄｅ．
Key words: ｐｏｌｙｃｒｙｓｔａｌｌｉｎｅｓｉｌｉｃｏｎ, ｄｅｖｅｌｏｐｍｅｎｔｓｔａｔｕｓ；ｍａｉｎｐｒｏｂｌｅｍｓ, ｐｏｌｉｃｙｒｅｃｏｍｍｅｎｄａｔｉｏｎｓ
CLC Number:
TN304.1+2
LIU Fen-Fang, XIE Zhong-Biao, ZHANG Jin-Bo. ＯｎＩｎｄｕｓｔｒｉａｌＰｏｌｉｃｙｏｆＰｏｌｙｃｒｙｓｔａｌｌｉｎｅＳｉｌｉｃｏ[J]. HPMug2oMmNrOfxWQHLiEksa6s0hFu9Ox348d7QefarYlaFR5ArkhOwm3Da1pmxmxCtenj1+6luWD#r#n+EPn9L6Ce+9onqnMlT+i, 2010, 26(3): 64-68.
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URL: http://kmyzxb.magtech.com.cn/EN/10.3969/j.issn.1009-0479.2010.03.015
http://kmyzxb.magtech.com.cn/EN/Y2010/V26/I3/64
