Effect of Different Zr/Ti on the Microstructure and Dielectric Properties of PZT Ceramics

doi:10.3969/j.issn.1009-0479.2017.01.001

Abstract

Abstract:

Pb(Zr_xTi_1-x)O₃(x=0.8, 0.7, 0.48, 0.3, 0.2) ceramics were prepared by solid state sintering. The thermal decomposition of powder, the surface topography，the microstructure and the effect of different Zr/Ti on the properties of PZT piezoelectric ceramics were characterized by TG/DSC，XRD，SEM and LCR respectively. PZT piezoelectric ceramic microstructure and morphology were also characterized; the influence of different Zr/Ti on dielectric properties of PZT ceramics were discussed in the paper. The result shows that Pb(Zr_xTi_1-x)O₃(x=0.8, 0.7, 0.48, 0.3, 0.2) ceramic target at 850 ℃ is re-sinteringed for 2 hours，and PZT has been the main crystal phase formation. After being sinteringed at 1 050 ℃ for 8 hours，the grain boundaries are clear, the grain size distribution is more uniform and denser, and the PZT ceramics with pure perovskite structure are obtained. It is found that the different Zr/Ti is important for preparing the microstructure and dielectric properties of PZT ceramics. At the same time，the dielectric constant with different Zr/Ti at 1 kHz is investigated. The dielectric constant reaches a maximum 534 when x=0. 48，and dielectric loss value is 0. 04.

Key words: PZT ceramics, solid phase sintering, microstructure, dielectric performance

CLC Number:

TN384

LI Yingjuan, SONG Qunling, ZHANG Wenli, ZHANG Jinliang, TENG Yu, CAI Chuanxiong. Effect of Different Zr/Ti on the Microstructure and Dielectric Properties of PZT Ceramics[J]. HPMug2oMmNrOfxWQHLiEksa6s0hFu9Ox348d7QefarYlaFR5ArkhOwm3Da1pmxmxCtenj1+6luWD#r#n+EPn9L6Ce+9onqnMlT+i, 2017, 33(1): 1-.

References

［１］张福学，王丽坤．现代压电学（下册）［Ｍ］．北京：科学出版社，２００２．
［２］ＫＡＬＥＭＶ，ＡＭＢ，ＴＩＭＵＩＮＭ．ＤｉｅｌｅｃｔｒｉｃａｎｄｐｉｅｚｏｅｌｅｃｔｒｉｃｐｒｏｐｅｒｔｉｅｓｏｆＰＺＴｃｅｒａｍｉｃｓｄｏｐｅｄｗｉｔｈｓｔｒｏｎｔｉｕｍａｎｄｌａｎｔｈａｎｕｍ［Ｊ］．ＣｅｒａｍｉｃｓＩｎｔｅｒｎａｔｉｏｎａｌ．２０１１，３７（４）：１２６５－１２７５．
［３］杨坚，严继康，康昆勇，等．烧结温度和升温速率对Ｐｂ（Ｓｂｌ／３Ｍｎ２／３）０．０５Ｚｒ０．４７Ｔｉ０．４８Ｏ３压电陶瓷性能的影响［Ｊ］．人工晶体学报，２０１６，４５（４）：９６２－９６７．
［４］朱福莉．低温共烧ＰＺＴ基压电陶瓷的研究及多层器件的制备［Ｄ］．南京：南京航空航天大学，２０１５．
［５］ＳＨＡＮＮＩＧＲＡＨＩＳＲ，ＴＡＹＦＥＨ，ＹＡＯＫ，ｅｔａｌ．Ｅｆｆｅｃｔｏｆｒａｒｅｅａｒｔｈ（Ｌａ，Ｎｄ，Ｓｍ，Ｅｕ，Ｇｄ，Ｄｙ，ＥｒａｎｄＹｂ）ｉｏｎｓｕｂｓｔｉｔｕｔｉｏｎｓｏｎｔｈｅｍｉｃｒｏｓｔｒｕｃｔｕｒａｌａｎｄｅｌｅｃｔｒｉｃａｌｐｒｏｐｅｒｔｉｅｓｏｆｓｏｌｇｅｌｇｒｏｗｎＰＺＴｃｅｒａｍｉｃｓ［Ｊ］．ＪｏｕｒｎａｌｏｆｔｈｅＥｕｒｏｐｅａｎＣｅｒａｍｉｃＳｏｃｉｅｔｙ，２００４，２４（１）：１６３－１７０．
［６］ＬＩＮＡＲＯＤＯＳＳＱ，ＺＨＡＮＧＪ，ＬＣＯＣＫＲ．ＰｒｅｐａｒａｔｉｏｎｏｆｓｕｂｍｉｃｒｏｎＰＺＴｐａｒｔｉｃｌｅｓｗｉｔｈｔｈｅｓｏｌｇｅｌｔｅｃｈｎｉｑｕｅ［Ｊ］．ＪｏｕｒｎａｌｏｆＥｕｒｏｐｅａｎｃｅｒａｍｉｃｓＳｏｃｉｅｔｙ，２００６，２６（１，２）：１１７－１２３．
［７］ＬＩＮＹＲ，ＣＬＡＲＫＡ，ＨＥＮＲＹＡＳ．ＥｈａｎｃｅｄｐｉｅｚｏｅｌｅｃｔｒｉｃｐｒｏｐｅｒｔｉｅｓｏｆｌｅｄａｚｉｒｃｏｎａｔｅｔｉｔａｎａｔｅｓｏｌｇｅｌｄｅｒｉｖｅｄｃｅｒａｍｉｃｓｕｓｉｎｇｓｉｎｇｌｅｃｒｙｓｔａｌＰｂＺｒ０．５２Ｔｉ０．４８Ｏ３ｃｕｂｅｓ［Ｊ］．ＪｏｕｅｎａｌｏｆＡｐｐｌｉｅｄＰｈｙｓｉｃｓ，２０１０，１０８（６）：（０６４１０８－１）－（０６４１０８－６）．
［８］徐刚，韩高荣，翁文剑．两步沉淀法合成钙钛矿锆钛酸铅粉体及其形成机制［Ｊ］．硅酸盐学报，２００７，３５（１）：２６－３０．
［９］李建华，孙清池，杨会平．共沉淀法制备ＰＺＴ粉体及性能研究［Ｊ］．压电与声光，２００６，２８（６）：７０４－７０６．
［１０］ＡＢＯＴＨＵＩＳ．ＰｒｏｃｅｓｓｉｌｌｇｏｆＰｂ（Ｚｒ０．５２Ｔｉ０．４８）Ｏ３（ＰＺＴ）ｆｒｏｍｍｉｃｒｏｗａｖｅａｎｄｃｏｎｖｅｎｔｉｏｎａｌｈｙｄｒｏｔｈｅｒｍａｌｐｏｗｄｅｒｓ［Ｊ］．ＭａｔｅｒｉａｌｓＲｅｓｅａｒｃｈＢｕｌｌｅｔｉｎ，２００９，３４（９）：１４１１－１４１９．
［１１］朱孔军，朱仁强，董娜娜，等，ＰＺＴ陶瓷粉体的水热合成［Ｊ］．无机材料学报，２０１２，２（５）：５０７－５１２．
［１２］周盈盈，高小琴，常钢，等．高性能锆钛酸铅（ＰＺＴ）粉体的水热合成及其压电陶瓷性能研究［Ｊ］．湖北大学学报：自然科学版，２０１６，３８（２）：９１－９５．
［１３］ＫＯＮＧＬＢ，ＭＡＪ．ＰＺＴｃｅｒａｍｉｃｓｆｏｒｍｅｄｄｉｒｅｃｔｌｙｆｒｏｍｏｘｉｄｅｓｖｉａｒｅａｃｔｉｖｅｓｉｎｔｅｒｉｎｇ［Ｊ］．ＭａｔｅｒｉａｌｓＬｅｔｔｅｒｓ，２０１１，５１（２）：９５－１００．
［１４］ＢＡＬＡＳＵＢＲＡＭＡＮＩＡＭＶ，ＡＮＩＲＵＤＨＰＳ，ＤＩＮＥＨＫＡ，ｅｔａｌ．Ｍｉｃｒｏｗａｖｅｅｆｆｅｃｔｓｉｎｌｅａｄｚｉｒｃｏｎｉｕｍｔｉｔａｎａｔｅｓｙｎｔｈｅｓｉｓ：Ｅｎｈａｎｅｄｋｉｎｅｔｉｃｓａｎｄｃｈａｎｇｅｄｍｅｃｈａｎｉｓｍｓ［Ｊ］．ＪｏｕｒｎａｌｏｆＡｍｅｒｉｃａｎＣｅｒａｍｉｃＳｏｃｉｅｔｙ，２００１，８４（６）：１１９７－１２０２．
［１５］ＫＯＮＧＬＢ，ＺＨＵＷＴ．ＰｒｅｐａｒａｔｉｏｎａｎｄｃｈａｒａｃｔｅｒｉｚａｔｉｏｎｏｆＰｂ（Ｚｒ０．５２Ｔｉ０．４８）Ｏ３，ｃｅｒａｍｉｃｓｆｒｏｍｈｉｇｈ－ｅｎｅｒｇｙｂａｌｌｍｉｌｌｉｎｇｐｏｗｄｅｒｓ［Ｊ］．ＭａｔｅｒｉａｌｓＬｅｔｔｅｒｓ，２０００，４２（４）：２３２－２３９．
［１６］李瑛娟．稀土掺杂ＰＺＴ陶瓷与薄膜材料的制备研究［Ｄ］．昆明理工大学，２０１２．
［１７］朱杰，谢康，张辉，等．脉冲激光沉积技术沉积温度对ＰＺＴ／ＬＳＡＴ薄膜生长取向的影响［Ｊ］．中国激光，２００８，３５（９）：１３８４－１３８７．
［１８］ＬＩＪＨ，ＳＵＮＱＣ．ＥｆｆｅｃｔｓｏｆＣｒ２Ｏ３ｄｏｐｉｎｇｏｎｔｈｅｅｌｅｃｔｒｉｃａｌｐｒｏｐｅｒｔｉｅｓａｎｄｔｈｅｔｅｍｐｅｒａｔｕｒｅｓｔａｂｉｌｉｔｉｅｓｏｆＰＺＴｂｉｎａｒｙｐｉｅｚｏｅｌｅｔｒｉｃｃｅｒａｍｉｃｓ［Ｊ］．ＲａｒｅＭｅｔａｌｓ，２００８，２７（４）：３６２－３６６．