Abstract: Pb(Zr_0.52,Ti_0.48)O₃, is a typical piezoelectric material. It can be used to prepare all kinds of piezoelectric devices because of its excellent properties, and it has been widely concerned by many researchers. PZT thin films with different compositions were prepared on SrTiO₃(100)single crystal sub-strate by PLD method. The effects of laser energies and Zr/Ti ratio on the crystallization quality of Pb(Zr_0.52,Ti_0.48)O₃, thin films were discussed. The optimum conditions for the growth of PZT films were obtained. The rocking curves of (002) were analyzed. The results show that the Pb(Zr_0.52,Ti_0.48)O₃, filmswith uniform surface and small root mean square roughness are obtained, reflecting better crystallization quality. The grain size of the film prepared in the 2 to 6 nm range according to the formula can be used indevice fabrication.

Key words:  PZT thin film, laser energy, Zr/Ti ratio, crystalization quality